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 BAS21H_2 ? NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 4 of 10 NXP Semiconductors BAS21H Single high-voltage switching diode 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤0.02. [2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA. Table 7. Characteristics Tamb =25°C unless otherwise speci?ed. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF= 100 mA [1]--1V IF = 200 mA [1] - - 1.25 V IR reverse current VR = 200 V - - 100 nA VR = 200 V; Tj = 150 °C - - 100 μA Cd diode capacitance VR =0V; f=1MHz - - 5 pF trr reverse recovery time [2] - - 50 ns |